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Gallium hydride is used in various applications. Among them, it is mainly applied to make thin metal films. It is also used in optics and semiconductor devices. However, it is not found as a free element in nature. Therefore, it is important to study its properties. In this regard, we have investigated the chemical properties of gallium hydride and organo gallium hydride derivatives. The results indicate that the reactivity of these compounds is relatively high.

In particular, Ga hydride reacts with NH3 to promote one-dimensional growth. In the process, it releases Ga hydride from the surface. This hydride promotes the hydride-assisted growth of GaN NWs. Moreover, a self-regulated diameter selective mechanism is proposed. Compared to the similar system with the analogous indium system, it is reported that this reaction is very facile.

However, a few studies have been carried out on the chemical properties of gallium hydride. These include equlibration reactions and organo gallium hydride reactions. Some of the organo hydride compounds have been characterized by using the solvent-model-dependent DFT method.

Gallium hydride has a high nuclear charge of 52+. Besides, it has a partial negative charge in the transition state. As a result, it can have reactivity as Bronsted acid. Also, it is a dimer and it is available in most volumes.

Gallium hydride can be synthesized by reacting gallium metal with dimethyl mercury in a sealed Carius tube. Various solvents are commonly used in these reactions. All the solvents were dried before use.

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