The Current Situation of Conductive Aisotropy within Two-dimensional Limit
Lattice symmetry can influence the thermal conductivity of crystal materials. The conductivity, conductivity, Raman number, and other physical quantities are affected by inherent anisotropy. The conductivity of ab in graphite, for example, is three orders larger than that outside in the C direction. This is also true in block van der Waals material three-dimensional blocks. New phenomena such as anisotropy on various surfaces have been emerging in recent years with the rapid development of research into two-dimensional materials.
These include the Raman anisotropy phenomenon and in-conductivity anisotropy for two-dimensional van der Waals material with low latticesymmetry (such SnSe or GeP). This area has been receiving more research and attention. The prototype devices that are based upon this should be quickly designed and built. However, current anisotropy data in the two-dimensional limit are within 10 which makes them unsuitable for the design and development of new devices. However, it is very difficult to know if electrical anisotropy could be controlled using quick and simple means.
The Two-dimensional Limiting Sublayer Semiconductor Material Galium Telluride
Researchers from the Chinese Academy of Sciences, Shenyang National Research Center for Materials Science, the Chinese Academy of Sciences, the Chinese Academy of Sciences and shenyang national center of materials science found that the lower limit semiconductor galium telluride has a two-dimensional structure. The prototype was then demonstrated using the gate voltage regulation of changes in electrical anisotropy of several order of magnitude.
The Effects Of Gallium Telluride
Vertical assembly of atomic layers within an inert atmosphere allowed the team to contain a few layers (between 4.8 and 20nm) of gallium informuride in two layers. Micro- and nano-processing was used to prepare the field effect devices. Electrical measurements were systematically carried out. Experimental results showed that conductivity in a few layers containing holes of gallium Telluride at room temperatures shows an elliptic behavior, with the direction changing. The conductivity anisotropy of these systems is comparable to SnSe. You can increase the conductivity anisotropy by controlling the gate voltage. It is much higher than the other systems that have in-plane electro anisotropy.
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