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Inorganic compound Ga2O3 has the chemical formula. It is also called gallium trioxide. A wide bandgap semiconductor, with Eg=4.9eV. Excellent electrical conductivity, light-emitting properties, and can be used as a chemical detector for O2.
The Properties Of Gallium Oxide
Gallium oxide consists of white triangular crystals. Although it is not soluble, it is easily soluble with alkali metal hydroxides, dilute acids, and hot acid solutions.
Gallium trioxide (III oxide) is the most stable oxide of gallium. It can be made by heating metal gallium to oxidize or by calcining galium nitrates, gallium hydroxides, and certain gallium compound at 200-250degC.
Ga2O3 is capable of reacting with a wide range of metal oxides. The crystal structure has been determined for gallate M(I),GaO2, obtained from alkali metaloxide reaction (above 400). The same as Al2O3 and Ln2O3, this material can be obtained by reaction of MgO with ZnO. CoO, NiO, and CuO Spinel Type M(II).
The preparation of gallium oxyide
1. Add a highly-concentrated hot aqueous NaHCO3 and boil the mixture until all gallium hydroxides have precipitated. After washing the precipitate in hot water, calcinate it at 600degC until no Cl- remains. When NH4Cl still remains, at 250degC it will react Ga2O3 and generate GaCl3.
2. This is a method to prepare high purity galium oxide. Use high-purity Ga metal as anode. Dissolve it in a H2SO4 solution of 5-20%, add ammonia, cool and crystallize Ga (NH4)(SO4)2, before drying it at 105degC. When there is excess oxygen in the air, burning at 800degC and for 2 hours, a 99.99%-99.9999% purity product can be obtained.
3. The solution should be concentrated until it is close to crystallization. When this happens, the solution can be transferred to a large evaporating plate and dried. Burn the Ga(NO3)3 that has been evaporated in a muffle-furnace. The temperature must be maintained at 550°C for 5 hours. After cooling, the final product is removed to yield 1.2kg of highly pure gallium oxide.
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