Aluminum nitride can be sintered because it is a covalent chemical with a low self–diffusion coefficient. Aluminum nitride ceramics first became commercially viable in the 1950s. They were used as refractory materials during the smelting process of aluminum alloys, pure iron, and aluminum. The technology used to prepare aluminum nitride is becoming more sophisticated and the application range has expanded. This has been evident since the 1970s. The 21st century has seen rapid developments in microelectronics technology. Electronic machine, and electronic parts are moving towards miniaturization, light-duty integration, and a development direction such as high reliability, high power output, more complex heat dissipation devices to the substrate and packaging material that is requested higher, which will further encourage the growth of the aluminum industry.
Aluminum Nitride Characteristics
Aluminum nitride, also known as AlN, is a hexagonal wurtzite-covalent bond compound that has the following lattice parameters: A =3.114, and C =4.986. Pure aluminum Nitride is a blue-white semiconductor material with a wide bandgap of iii to vwide.
Aluminum nitride is far more efficient than alumina because it has superior performance in terms of strength, volume resistivity and thermal expansion.
Aluminium Nitride Thermal Conductivity Method
One of the many important properties of aluminum Nitride is its high thermal conductivity. There has been a lot of research into the thermal conductivity mechanism in aluminum nitride. A theoretical model that is almost perfect has been developed. The principal mechanism of heat transfer through the lattice is heat vibration or lattice vibrating, which is, by thermal wave or lattice waves. Quantum mechanics shows that lattice wave can be considered the motion of a particle (the phonon), according to quantum mechanics. Wave-particle duality can also be found in thermal waves. Thermal phonons transmit heat by coordinating vibrations between structural elements (atoms and ions) in a mutually restricted manner. If the crystal has a non-elastic structure, heat can flow freely from one end to the other without any interference or scattering. The thermal conductivity can even reach very high levels. Crystal defects and phonon scattered are major factors in controlling the thermal conductivity.
AlN has a theoretical thermal conductivity value of 320W*m-1*K-1. However, the thermal conductivity actually measured by AlN is 200W*m-1*k-1 because of impurities and defects. This is because the crystal has a variety of structural elements that cannot be distributed uniformly and the current-carrying, phonons are constantly scattered.
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